Features: 1) Low on-resistance. (110mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) ApplicationDC-DC converter Specifications Parameter Symbol Limits Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Drain Cur...
RTQ040P02: Features: 1) Low on-resistance. (110mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) ApplicationDC-DC converter Specifications Parameter Symbol ...
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Parameter | Symbol | Limits | Unit | |
Drain-Source Voltage | VDSS | -20 | V | |
Gate-Source Voltage | VGSS | ±12 | V | |
Drain Current | Continuous | ID | ±4.0 | A |
Pulsed | IDP | ±16 | A `1 | |
Source Current (Body Diode) | Continuous | Is | -1 | A `1 |
Pulsed | Isp | -16 | A | |
Total Power Dissipation | PD | 1.25 | W `2 | |
Channel Temperature | Tch | 150 | °C | |
Range of Storage temperature | Tstg | -55 to +150 | °C |
`1 Pw10s, Duty cycle1%
`2 Mounted on a ceramic board.