Features: 1) Low On-resistance.(110mΩ at 2.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive.(2.5V) ApplicationDC-DC converter Specifications Parameter Symbol Limits Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Drain Curre...
RTQ030P02: Features: 1) Low On-resistance.(110mΩ at 2.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive.(2.5V) ApplicationDC-DC converter Specifications Parameter Symbol Li...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter | Symbol | Limits | Unit | |
Drain-Source Voltage | VDSS | -20 | V | |
Gate-Source Voltage | VGSS | ±12 | V | |
Drain Current | Continuous | ID | ±3 | A |
Pulsed | IDP | ±12 | A `1 | |
Source Current (Body Diode) | Continuous | Is | -1 | A |
Pulsed | Isp | -4 | A `1 | |
Total Power Dissipation | PD | 1.25 | W `2 | |
Channel Temperature | Tch | 150 | °C | |
Storage Temperature | Tstg | -55 to +150 | °C |
`1 Pw10s, Duty cycle1%
`2 Mounted on a ceramic board.