MOSFET P-CH 20V 3A TSMT6
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 20 V |
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | +/- 3 A |
Resistance Drain-Source RDS (on) : | 0.11 Ohms | Configuration : | Single |
Mounting Style : | SMD/SMT | Package / Case : | TSMT-6 |
Packaging : | Reel |
Parameter | Symbol | Limits | Unit | |
Drain-Source Voltage | VDSS | -20 | V | |
Gate-Source Voltage | VGSS | ±12 | V | |
Drain Current | Continuous | ID | ±3 | A |
Pulsed | IDP | ±12 | A `1 | |
Source Current (Body Diode) | Continuous | Is | -1 | A |
Pulsed | Isp | -4 | A `1 | |
Total Power Dissipation | PD | 1.25 | W `2 | |
Channel Temperature | Tch | 150 | °C | |
Storage Temperature | Tstg | -55 to +150 | °C |
`?1 Pw10s, Duty cycle1%
`?2 Mounted on a ceramic board.
Technical/Catalog Information | RTQ030P02TR |
Vendor | Rohm Semiconductor(VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 3A |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 3A, 4.5V |
Input Capacitance (Ciss) @ Vds | 800pF @ 10V |
Power - Max | 1.25W |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 9nC @ 4.5V |
Package / Case | TSMT6 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | RTQ030P02TR RTQ030P02TR RTQ030P02DKR ND RTQ030P02DKRND RTQ030P02DKR |