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RT1A050ZPTR

MOSFET P Chan-12V-5A Mid-PowerSwitching

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SeekIC No. : 00158503 Detail

RT1A050ZPTR: MOSFET P Chan-12V-5A Mid-PowerSwitching

RT1A050ZPTR Data Sheet

floor Price/Ceiling Price

US $ .19~.2 / Piece | Get Latest Price
Part Number:
RT1A050ZPTR
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~3000
  • 3000~6000
  • 6000~12000
  • Unit Price
  • $.2
  • $.19
  • $.19
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 12 V
Gate-Source Breakdown Voltage : +/- 10 V Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 26 mOhms at 4.5 V Configuration : Single Hex Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TSST-8 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 12 V
Gate-Source Breakdown Voltage : +/- 10 V
Continuous Drain Current : 5 A
Configuration : Single Hex Drain
Package / Case : TSST-8
Resistance Drain-Source RDS (on) : 26 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationRT1A050ZPTR
VendorRohm Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25° C5A
Rds On (Max) @ Id, Vgs26 mOhm @ 5A, 4.5V
Input Capacitance (Ciss) @ Vds 2800pF @ 6V
Power - Max1.25W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs34nC @ 4.5V
Package / Case*
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names RT1A050ZPTR
RT1A050ZPTR



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