MOSFET P Chan-12V-4A Mid-PowerSwitching
RT1A040ZPTR: MOSFET P Chan-12V-4A Mid-PowerSwitching
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 12 V | ||
Gate-Source Breakdown Voltage : | +/- 10 V | Continuous Drain Current : | 4 A | ||
Resistance Drain-Source RDS (on) : | 30 mOhms at 4.5 V | Configuration : | Single Hex Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TSST-8 | Packaging : | Reel |
Technical/Catalog Information | RT1A040ZPTR |
Vendor | Rohm Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25° C | 4A |
Rds On (Max) @ Id, Vgs | 30 mOhm @ 4A, 4.5V |
Input Capacitance (Ciss) @ Vds | 2350pF @ 6V |
Power - Max | 1.25W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 30nC @ 4.5V |
Package / Case | * |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | RT1A040ZPTR RT1A040ZPTR |