RT1A040ZPTR

MOSFET P Chan-12V-4A Mid-PowerSwitching

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SeekIC No. : 00145680 Detail

RT1A040ZPTR: MOSFET P Chan-12V-4A Mid-PowerSwitching

floor Price/Ceiling Price

US $ .23~.57 / Piece | Get Latest Price
Part Number:
RT1A040ZPTR
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.57
  • $.45
  • $.34
  • $.23
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 12 V
Gate-Source Breakdown Voltage : +/- 10 V Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 30 mOhms at 4.5 V Configuration : Single Hex Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TSST-8 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 12 V
Gate-Source Breakdown Voltage : +/- 10 V
Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 30 mOhms at 4.5 V
Configuration : Single Hex Drain
Package / Case : TSST-8


Parameters:

Technical/Catalog InformationRT1A040ZPTR
VendorRohm Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25° C4A
Rds On (Max) @ Id, Vgs30 mOhm @ 4A, 4.5V
Input Capacitance (Ciss) @ Vds 2350pF @ 6V
Power - Max1.25W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs30nC @ 4.5V
Package / Case*
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names RT1A040ZPTR
RT1A040ZPTR



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