MOSFET N-CH 30V 2.5A TSMT3
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 2.5 A | ||
Resistance Drain-Source RDS (on) : | 0.83 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TSMT-6 | Packaging : | Reel |
Technical/Catalog Information | RSR025N03TL |
Vendor | Rohm Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 2.5A |
Rds On (Max) @ Id, Vgs | 70 mOhm @ 2.5A, 10V |
Input Capacitance (Ciss) @ Vds | 165pF @ 10V |
Power - Max | 1W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 4.1nC @ 5V |
Package / Case | TSMT3 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | RSR025N03TL RSR025N03TL RSR025N03TLTR ND RSR025N03TLTRND RSR025N03TLTR |