RSR010N10TL, US $ .16-.4, RSR010N10TL DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 003430679 Detail

RSR010N10TL: MOSFET N-CH 100V 1.0A TSMT3

RSR010N10TL Data Sheet

US $ .16~.4 / Piece | Get Latest Price

Part Number:: RSR010N10TL
Mfg:
Supply Ability:: 5000

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Upload time: 2024/12/21

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Recent History
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Product Details

Quick Details

Series:	-	Manufacturer:	Rohm Semiconductor
FET Type:	MOSFET N-Channel, Metal Oxide	Transistor Type:	-
Gain :	15.5 dB	Current - Collector (Ic) (Max):	-
FET Feature:	Logic Level Gate	Drain to Source Voltage (Vdss):	100V
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	1A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	520 mOhm @ 1A, 10V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	2.5V @ 1mA	Gate Charge (Qg) @ Vgs:	3.5nC @ 5V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	140pF @ 25V
Power - Max:	540mW	Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63	Supplier Device Package:	TSMT3

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 100V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) @ Vds: 140pF @ 25V
Current - Continuous Drain (Id) @ 25° C: 1A
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Manufacturer: Rohm Semiconductor
Supplier Device Package: TSMT3
Rds On (Max) @ Id, Vgs: 520 mOhm @ 1A, 10V
Gate Charge (Qg) @ Vgs: 3.5nC @ 5V
Power - Max: 540mW

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RSR010N10TL

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