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RJK2055DPA-00#J0

MOSFET N-CH 200V W-PAK

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SeekIC No. : 003432344 Detail

RJK2055DPA-00#J0: MOSFET N-CH 200V W-PAK

RJK2055DPA-00#J0 Data Sheet

floor Price/Ceiling Price

US $ .45~.5 / Piece | Get Latest Price
Part Number:
RJK2055DPA-00#J0
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~2500
  • 2500~5000
  • 5000~12500
  • 12500~25000
  • 25000~62500
  • Unit Price
  • $.5
  • $.48
  • $.47
  • $.46
  • $.45
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/19

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Product Details

Quick Details

Series: - Manufacturer: Renesas Electronics America
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 200V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 20A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 69 mOhm @ 10A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: 38nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2400pF @ 25V
Power - Max: 30W Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WPAK    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)Alternate Packaging
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 38nC @ 10V
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25° C: 20A
Vgs(th) (Max) @ Id: -
Power - Max: 30W
Input Capacitance (Ciss) @ Vds: 2400pF @ 25V
Manufacturer: Renesas Electronics America
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WPAK
Rds On (Max) @ Id, Vgs: 69 mOhm @ 10A, 10V


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