Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 200 V Gate to source voltage VGSS ±30 V Drain current ID 40 A Drain peak current ID(pulse) Note1 160 A B...
RJK2009DPM: Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 200 V Gate to source v...
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Item | Symbol | Ratings | Unit |
Drain to source voltage | VDSS | 200 | V |
Gate to source voltage | VGSS | ±30 | V |
Drain current | ID | 40 | A |
Drain peak current | ID(pulse) Note1 | 160 | A |
Body-drain diode reverse drain current | IDR | 40 | A |
Body-drain diode reverse drain peak current | IDR(pulse) Note1 | 160 | A |
Avalanche current | IAP Note3 | 40 | A |
Avalanche energy | EAR Note3 | 106 | mJ |
Channel dissipation | Pch Note2 | 60 | W |
Channel to case thermal impedance | ch-c | 2.08 | °C/W |
Channel temperature | Tch | 150 | °C |
Storage temperature | Tstg | 55 to +150 | °C |