RJK0365DPA-00#J0

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Current - Continuous Drain (Id) @ 25° C: 30A
Vgs(th) (Max) @ Id: -
Power - Max: 30W
Gate Charge (Qg) @ Vgs: 7.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 15A, 10V
Manufacturer: Renesas Electronics America
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WPAK
Input Capacitance (Ciss) @ Vds: 1180pF @ 10V


Parameters:

Technical/Catalog Information	RJK0365DPA-00#J0
Vendor	Renesas Technology America
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	9.1 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	1180pF @ 10V
Power - Max	30W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	7.6nC @ 4.5V
Package / Case	WPAK
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RJK0365DPA 00#J0 RJK0365DPA00#J0 RJK0365DPA 00#J0TR ND RJK0365DPA00#J0TRND RJK0365DPA-00#J0TR