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RJK0365DPA-00#J0

MOSFET N-CH 30V 30A WPAK

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SeekIC No. : 003432173 Detail

RJK0365DPA-00#J0: MOSFET N-CH 30V 30A WPAK

RJK0365DPA-00#J0 Data Sheet

floor Price/Ceiling Price

US $ .28~.64 / Piece | Get Latest Price
Part Number:
RJK0365DPA-00#J0
Mfg:
Supply Ability:
5000

Price Break

  • Qty
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  • 10~25
  • 25~100
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  • 500~1000
  • Unit Price
  • $.64
  • $.57
  • $.5
  • $.45
  • $.39
  • $.35
  • $.28
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: Renesas Electronics America
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 30A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 15A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: 7.6nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1180pF @ 10V
Power - Max: 30W Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WPAK    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Current - Continuous Drain (Id) @ 25° C: 30A
Vgs(th) (Max) @ Id: -
Power - Max: 30W
Gate Charge (Qg) @ Vgs: 7.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 15A, 10V
Manufacturer: Renesas Electronics America
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WPAK
Input Capacitance (Ciss) @ Vds: 1180pF @ 10V


Parameters:

Technical/Catalog InformationRJK0365DPA-00#J0
VendorRenesas Technology America
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs9.1 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 1180pF @ 10V
Power - Max30W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs7.6nC @ 4.5V
Package / CaseWPAK
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names RJK0365DPA 00#J0
RJK0365DPA00#J0
RJK0365DPA 00#J0TR ND
RJK0365DPA00#J0TRND
RJK0365DPA-00#J0TR



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