Position: Home  > All Categories> Integrated Circuits (ICs) > RJK0225DNS-00#J5

RJK0225DNS-00#J5

MOSFET N-CH 25V 30A 8-HVSON

product image

RJK0225DNS-00#J5 Picture
See larger image
SeekIC No. : 003433880 Detail

RJK0225DNS-00#J5: MOSFET N-CH 25V 30A 8-HVSON

RJK0225DNS-00#J5 Data Sheet

floor Price/Ceiling Price

US $ .28~.64 / Piece | Get Latest Price
Part Number:
RJK0225DNS-00#J5
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • Unit Price
  • $.64
  • $.57
  • $.5
  • $.45
  • $.39
  • $.35
  • $.28
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: - Manufacturer: Renesas Electronics America
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 30A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 15A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: 8.5nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2310pF @ 10V
Power - Max: 30W Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-HVSON    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Digi-Reel®Alternate Packaging
Gate Charge (Qg) @ Vgs: 8.5nC @ 4.5V
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25° C: 30A
Vgs(th) (Max) @ Id: -
Power - Max: 30W
Package / Case: 8-VDFN Exposed Pad
Manufacturer: Renesas Electronics America
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds: 2310pF @ 10V
Supplier Device Package: 8-HVSON


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Filters
PICO2205A
PICO2204A
Crystals and Oscillators
WT325BI0030.000000
2SB49
View more