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RJK0225DNS-00#J5

MOSFET N-CH 25V 30A 8-HVSON

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SeekIC No. : 003433880 Detail

RJK0225DNS-00#J5: MOSFET N-CH 25V 30A 8-HVSON

RJK0225DNS-00#J5 Data Sheet

floor Price/Ceiling Price

US $ .28~.64 / Piece | Get Latest Price
Part Number:
RJK0225DNS-00#J5
Mfg:
Supply Ability:
5000

Price Break

  • Qty
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  • 10~25
  • 25~100
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  • 500~1000
  • Unit Price
  • $.64
  • $.57
  • $.5
  • $.45
  • $.39
  • $.35
  • $.28
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Quick Details

Series: - Manufacturer: Renesas Electronics America
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 30A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 15A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: 8.5nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2310pF @ 10V
Power - Max: 30W Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-HVSON    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Digi-Reel®Alternate Packaging
Gate Charge (Qg) @ Vgs: 8.5nC @ 4.5V
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25° C: 30A
Vgs(th) (Max) @ Id: -
Power - Max: 30W
Package / Case: 8-VDFN Exposed Pad
Manufacturer: Renesas Electronics America
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds: 2310pF @ 10V
Supplier Device Package: 8-HVSON


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