RJK0364DPA-00#J0

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Gate Charge (Qg) @ Vgs: 10nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C: 35A
Vgs(th) (Max) @ Id: -
Power - Max: 35W
Manufacturer: Renesas Electronics America
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WPAK
Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 17.5A, 10V
Input Capacitance (Ciss) @ Vds: 1600pF @ 10V


Parameters:

Technical/Catalog Information	RJK0364DPA-00#J0
Vendor	Renesas Technology America (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	35A
Rds On (Max) @ Id, Vgs	7.8 mOhm @ 17.5A, 10V
Input Capacitance (Ciss) @ Vds	1600pF @ 10V
Power - Max	35W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	10nC @ 4.5V
Package / Case	WPAK
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RJK0364DPA 00#J0 RJK0364DPA00#J0 RJK0364DPA 00#J0CT ND RJK0364DPA00#J0CTND RJK0364DPA-00#J0CT