Position: Home  > All Categories> Integrated Circuits (ICs) > RJK0355DPA-01#J0B

RJK0355DPA-01#J0B

MOSFET N-CH 30V 30A 2WPACK

product image

RJK0355DPA-01#J0B Picture
See larger image
SeekIC No. : 003432037 Detail

RJK0355DPA-01#J0B: MOSFET N-CH 30V 30A 2WPACK

RJK0355DPA-01#J0B Data Sheet

floor Price/Ceiling Price

US $ .25~.57 / Piece | Get Latest Price
Part Number:
RJK0355DPA-01#J0B
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • Unit Price
  • $.57
  • $.51
  • $.45
  • $.41
  • $.35
  • $.32
  • $.25
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: - Manufacturer: Renesas Electronics America
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 30A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 10.7 mOhm @ 15A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: 6.3nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 860pF @ 10V
Power - Max: 25W Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WPAK    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Power - Max: 25W
Current - Continuous Drain (Id) @ 25° C: 30A
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) @ Vgs: 6.3nC @ 4.5V
Manufacturer: Renesas Electronics America
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WPAK
Rds On (Max) @ Id, Vgs: 10.7 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds: 860pF @ 10V


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Resistors
A101G
3006P-1-205LF
Test Equipment
TOP853
TOP2005
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
RF and RFID
X3C26P1-30S
1P620S
View more