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RJK0329DPB-00#J0

MOSFET N-CH 30V 55A LFPAK

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SeekIC No. : 003432204 Detail

RJK0329DPB-00#J0: MOSFET N-CH 30V 55A LFPAK

RJK0329DPB-00#J0 Data Sheet

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Part Number:
RJK0329DPB-00#J0
Mfg:
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Quick Details

Series: - Manufacturer: Renesas Electronics America
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 11.5 dB at 500 MHz Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 55A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 27.5A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) @ Vgs: 35nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 5330pF @ 10V
Power - Max: 60W Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669 Supplier Device Package: LFPAK    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Power - Max: 60W
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25° C: 55A
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Manufacturer: Renesas Electronics America
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 27.5A, 10V
Gate Charge (Qg) @ Vgs: 35nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 5330pF @ 10V


Parameters:

Technical/Catalog InformationRJK0329DPB-00#J0
VendorRenesas Technology America (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C55A
Rds On (Max) @ Id, Vgs2.3 mOhm @ 27.5A, 10V
Input Capacitance (Ciss) @ Vds 5330pF @ 10V
Power - Max60W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs35nC @ 4.5V
Package / CaseLFPAK
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names RJK0329DPB 00#J0
RJK0329DPB00#J0
RJK0329DPB 00#J0DKR ND
RJK0329DPB00#J0DKRND
RJK0329DPB-00#J0DKR



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