RHP020N06T100

MOSFET N-CH 60V 200MA

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RHP020N06T100: MOSFET N-CH 60V 200MA

floor Price/Ceiling Price

US $ .16~.44 / Piece | Get Latest Price
Part Number:
RHP020N06T100
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • 500~1000
  • Unit Price
  • $.44
  • $.35
  • $.27
  • $.18
  • $.16
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 0.24 Ohms Configuration : Single
Mounting Style : Through Hole Package / Case : MPT3
Packaging : Reel    

Description

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Packaging : Reel
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 0.24 Ohms
Package / Case : MPT3


Parameters:

Technical/Catalog InformationRHP020N06T100
VendorRohm Semiconductor(VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C2A
Rds On (Max) @ Id, Vgs200 mOhm @ 2A, 10V
Input Capacitance (Ciss) @ Vds 140pF @ 10V
Power - Max500mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs14nC @ 10V
Package / CaseSC-62, SOT-89, MPT3 (3 leads + Tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names RHP020N06T100
RHP020N06T100
RHP020N06T100CT ND
RHP020N06T100CTND
RHP020N06T100CT



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