Features: Low On-resistance.High speed switching.Wide SOA.ApplicationSwitchingSpecifications Parameter Symbol Limits Units Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Drain current Continuous ID ±2 A Pulsed IDP ∗1 ±8 A Source current Con...
RHP020N06: Features: Low On-resistance.High speed switching.Wide SOA.ApplicationSwitchingSpecifications Parameter Symbol Limits Units Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ...
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Parameter | Symbol | Limits | Units | |
Drain-Source Voltage | VDSS | 60 | V | |
Gate-Source Voltage | VGSS | ±20 | V | |
Drain current | Continuous | ID | ±2 | A |
Pulsed | IDP ∗1 |
±8 | A | |
Source current | Continuous | IS | 2 | A |
Pulsed | ISP ∗1 | 8 | A | |
Total power dissipation | PD | 500 | mW | |
2 | W ∗2 | |||
Channel temperature | Tch | 150 | ° C | |
Range of storage temperature | Tstg | -55 to 150 | ° C |