Features: • 40A, 100V• r DS(ON) = 0.040• Temperature Compensating PSPICE® Model• Peak Current vs Pulse Width Curve• UIS Rating Curve• 175 Operating Temperature• Related Literature- TB334 Guidelines for Soldering Surface Mount Components to PC Boards S...
RFP40N10LE: Features: • 40A, 100V• r DS(ON) = 0.040• Temperature Compensating PSPICE® Model• Peak Current vs Pulse Width Curve• UIS Rating Curve• 175 Operating Temperatur...
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UNITS | |||
Drain to Source Breakdown Voltage (Note 1) | VDSS | 100 | V |
Drain to Gate Voltage (RGS = 20kW) (Note 1) . | VDGR | 100 | V |
Gate to Source Voltage (Note 4) | VGS | ±10 | V |
Continuous Drain Current | ID | 40 | A |
Pulsed Drain Current (Note 3) | IDM | Refer to Peak Current Curve | |
Single Pulse Avalanche Energy Rating | EAS | Refer to UIS Curve | |
Power Dissipation (Figure 1)c | PD | 150 | W |
Derate Above 25 | 1.00 | W/ | |
Operating and Storage Temperature | TJ, TSTG | -55 to 175 | |
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief 334 |
T L Tpkg |
300 260 |
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
These N-Channel enhancement mode power MOSFETs RFP40N10LE are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. RFP40N10LE were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors RFP40N10LE can be operated directly from integrated circuits.
Formerly developmental type TA49163.