RFP40N10

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 40 A
Resistance Drain-Source RDS (on) : 0.04 Ohms


Features:

• 40A, 100V
• r_DS(ON) = 0.040
• UIS Rating Curve
• SOA is Power Dissipation Limited
• 175 Operating Temperature
• Related Literature
  - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

			UNITS
Drain to Source Breakdown Voltage (Note 1)	VDSS	100	V
Drain to Gate Voltage (RGS = 20kW) (Note 1) .	VDGR	100	V
Gate to Source Voltage	VGS	±20	V
Drain Current Continuous (Figure 2).	ID	40	A
Pulsed Drain Current (Note 2)	IDM	100	A
Pulse Avalanche Rating	EAS	Figures 4, 12, 13
Power Dissipation	PD	160	W
Derate Above 25		1.07	W/
Operating and Storage Temperature	TJ, TSTG	-55 to 175
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief 334	T L Tpkg	300 260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Description

These are N-Channel power MOSFETs RFP40N10 manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding perormance. RFP40N10 were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors RFP40N10 can be operated directly from integrated circuits.

Formerly developmental type TA9846

Parameters:

Technical/Catalog Information	RFP40N10
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	40A
Rds On (Max) @ Id, Vgs	40 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds	-
Power - Max	160W
Packaging	Tube
Gate Charge (Qg) @ Vgs	300nC @ 20V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RFP40N10 RFP40N10