Features: • 3A, 450V and 500V• rDS(ON) = 3W• Related Literature- TB334 Guidelines for Soldering Surface Mount Components to PC Boards Specifications RFM3N45 RFM3N50 RFP3N45 RFP3N50 UNITS Drain to Source Voltage (Note 1) VDSS 450 200 500 500 V Drain to Gate ...
RFP3N45: Features: • 3A, 450V and 500V• rDS(ON) = 3W• Related Literature- TB334 Guidelines for Soldering Surface Mount Components to PC Boards Specifications RFM3N45 RFM3N50 RFP3N...
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RFM3N45 | RFM3N50 | RFP3N45 | RFP3N50 | UNITS | |
Drain to Source Voltage (Note 1) VDSS | 450 | 200 | 500 | 500 | V |
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 450 | 200 | 500 | 500 | V |
Continuous Drain Current ID | 3 | 3 | 3 | 3 | A |
Pulsed Drain Current (Note 3) IDM | 30 | 30 | 30 | 30 | A |
Gate to Source Voltage VGS | ±20 | ±20 | ±20 | ±20 | V |
Maximum Power Dissipation PD | 75 | 75 | 60 | 60 | W |
Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID | 0.8 | 0.8 | 0.8 | 0.8 | W/oC |
Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | oC |
Maximum Temperature for Soldering | |||||
Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | 300 | 300 | o C |
Package Body for 10s, See Techbrief 334 Tpkg | 260 | 260 | 260 | 260 | o C |
These are N-Channel enhancement mode silicon gate power field effect transistors RFP3N45 designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types RFP3N45 can be operated directly from integrated circuits.