RFP3N45

Features: • 3A, 450V and 500V• rDS(ON) = 3W• Related Literature- TB334 Guidelines for Soldering Surface Mount Components to PC Boards Specifications RFM3N45 RFM3N50 RFP3N45 RFP3N50 UNITS Drain to Source Voltage (Note 1) VDSS 450 200 500 500 V Drain to Gate ...

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SeekIC No. : 004476628 Detail

RFP3N45: Features: • 3A, 450V and 500V• rDS(ON) = 3W• Related Literature- TB334 Guidelines for Soldering Surface Mount Components to PC Boards Specifications RFM3N45 RFM3N50 RFP3N...

floor Price/Ceiling Price

Part Number:
RFP3N45
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/15

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Product Details

Description



Features:

• 3A, 450V and 500V
• rDS(ON) = 3W
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"



Specifications

  RFM3N45 RFM3N50 RFP3N45 RFP3N50 UNITS
Drain to Source Voltage (Note 1) VDSS 450 200 500 500 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 450 200 500 500 V
Continuous Drain Current ID 3 3 3 3 A
Pulsed Drain Current (Note 3) IDM 30 30 30 30 A
Gate to Source Voltage VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation PD 75 75 60 60 W
Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID 0.8 0.8 0.8 0.8 W/oC
Operating and Storage Temperature .TJ, TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL 300 300 300 300 o C
Package Body for 10s, See Techbrief 334 Tpkg 260 260 260 260 o C



Description

These are N-Channel enhancement mode silicon gate power field effect transistors RFP3N45 designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types RFP3N45 can be operated directly from integrated circuits.




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