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RFP3055

MOSFET Power MOSFET N-Ch 60V/12a/0.150 Ohm

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SeekIC No. : 00161515 Detail

RFP3055: MOSFET Power MOSFET N-Ch 60V/12a/0.150 Ohm

RFP3055 Data Sheet

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Part Number:
RFP3055
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 0.15 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 12 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.15 Ohms


Features:

• 12A, 60V
• DS(ON)= 0.150Ω
• Temperature Compensating PSPICE®Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature- TB334 "Guidelines for Soldering Surface MountComponents to PC Boards"


Specifications
RFD3055, RFD3055SM, RFP3055
UNITS
Drain to Source Voltage (Note 1) VDSS
60
V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR
60
V
Continuous (Figure 2)ID
±20
A
Pulsed Drain Current (Note 3)DM
Refer to Peak Current Curve
A
Gate to Source Voltage VGS
-5 to10
V

Power DissipationPD

40
W
Linear Derating Factor
0.357
 W/oC
Derate above 25oC
38
W
Single Pulse Avalanche Energy RatingEAS
Refer to UIS Curve
Operating and Storage Temperature .TJ, TSTG
-55 to 75
o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s TL
300
o C
Package Body for 10s, See Techbrief 334 Tpkg
260
o C



Parameters:

Technical/Catalog InformationRFP3055
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs150 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds 300pF @ 25V
Power - Max53W
PackagingTube
Gate Charge (Qg) @ Vgs23nC @ 20V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names RFP3055
RFP3055



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