RFP30P06

Packaging :
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Package / Case : TO-220AB
Continuous Drain Current : 30 A
Drain-Source Breakdown Voltage : - 60 V
Resistance Drain-Source RDS (on) : 0.065 Ohms


Features:

• 30A, 60V
• r _DS(ON) = 0.065W
• Temperature Compensating PSPICE^® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175 Operating Temperature
• Related Literature
   - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

			UNITS
Drain to Source Voltage (Note 1)	VDSS	-60	V
Drain to Gate Voltage (RGS = 20kW)(Note 1)	VDGR	-60	V
Gate to Source Voltage	VGS	±20	V
Continuous Drain Current	ID	30	A
Pulsed Drain Current (Note 3) (Figure 5)	IDM	Refer to Peak Current Curve
Single Pulse Avalanche Rating (Figure 6)	EAS	Refer to UIS Curve
Power Dissipation	PD	135	W
Linear Derating Factor		0.9	W/
Operating and Storage Temperature	TJ, TSTG	-55 to 175
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334	TL Tpkg	300 260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Description

These are P-Channel power MOSFETs RFP30P06 manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors RFP30P06 can be operated directly from integrated circuits.

Formerly developmental type TA09834.

Parameters:

Technical/Catalog Information	RFP30P06
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	65 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	3200pF @ 25V
Power - Max	135W
Packaging	Tube
Gate Charge (Qg) @ Vgs	170nC @ 20V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	RFP30P06 RFP30P06