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RFP2N10

Features: • 2A, 80V and 100V• rDS(ON) 1.05W• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedance• Majority Carrier Device• Related Literature- TB334 Guidelines for Soldering Surface Mo...

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SeekIC No. : 004476621 Detail

RFP2N10: Features: • 2A, 80V and 100V• rDS(ON) 1.05W• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedance&...

RFP2N10 Data Sheet

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Part Number:
RFP2N10
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 2A, 80V and 100V
• rDS(ON) 1.05W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

  RFP2P08 RFP2P10 UNITS
Drain to Source Voltage (Note 1) VDSS 80 100 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 80 100 V
Continuous Drain Current ID 2 2 A
Pulsed Drain Current (Note 3) IDM 5 5 A
Gate to Source Voltage VGS ±20 ±20 V
Maximum Power Dissipation PD 25 25 W
Linear Derating Factor 0.2 0.2 W/o Caaa
Operating and Storage Temperature .TJ, TSTG -55 to 150 -55 to 150 o C
Maximum Temperature for Soldering      
Leads at 0.063in (1.6mm) from Case for 10s. TL 300 300 o C
Package Body for 10s, See Techbrief 334 Tpkg 260 260 o C



Description

These are N-channel enhancement mode silicon gate power field effect transistors RFP2N10 designed for applications such
switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types RFP2N10 can be operated directly from integrate circuits.




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