Features: • 25A, 60V• rDS(ON)= 0.047• Temperature Compensating PSPICE®Model• Peak Current vs Pulse Width Curve• UIS Rating Curve• 175 Operating Temperature• Related Literature - TB334, Guidelines for Soldering Surface Mount Components to PC Boards Spe...
RFP25N06: Features: • 25A, 60V• rDS(ON)= 0.047• Temperature Compensating PSPICE®Model• Peak Current vs Pulse Width Curve• UIS Rating Curve• 175 Operating Temperature...
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Drain to Source Voltage (Note 1) | VDSS | 60 | V |
Drain to Gate Voltage (RGS = 20kW)(Note 1) | VDGR | 60 | V |
Gate to Source Voltage | VGS | ±20 | V |
Continuous Drain Current(Figure 2) | ID | 25 | A |
Pulsed Drain Current | IDM | (Figure 5) | A |
Single Pulse Avalanche Rating | EAS | (Figure 5) |
A |
Power Dissipation | PD | 72 | W |
Linear Derating Factor | 0.48 | W/ | |
Operating and Storage Temperature | TJ, TSTG | -55 to 175 | |
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334 |
T L Tpkg |
300 260 |
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
These N-Channel power MOSFETs RFP25N06 are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding prformance. RFP25N06 were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors RFP25N06 can be operated directly from integrated circuits.
Formerly developmental type TA09771.