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RFM12N35

Features: • 12A, 350V and 400V• rDS(ON) = 0.500WSpecifications RFM12N35 RFP6N40 UNITS Drain to Source Voltage (Note 1) VDSS 350 400 V Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 350 400 V RMS Continuous ID 12 12 A Pulsed Drain Current (Note 3) IDM 24 ...

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SeekIC No. : 004476582 Detail

RFM12N35: Features: • 12A, 350V and 400V• rDS(ON) = 0.500WSpecifications RFM12N35 RFP6N40 UNITS Drain to Source Voltage (Note 1) VDSS 350 400 V Drain to Gate Voltage (RGS = 1MW) ...

RFM12N35 Data Sheet

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Part Number:
RFM12N35
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 12A, 350V and 400V
• rDS(ON) = 0.500W


Specifications

  RFM12N35 RFP6N40 UNITS
Drain to Source Voltage (Note 1) VDSS 350 400 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 350 400 V
RMS Continuous ID 12 12 A
Pulsed Drain Current (Note 3) IDM 24 24 V
Maximum Power Dissipation PD ±20 ±20 V
Maximum Power Dissipation PD 150 150 W
Operating and Storage Temperature .TJ, TSTG -55 to 150 -55 to 150 o C
Linear Derating Factor 1.2 1.2 W/oC
Leads at 0.063in (1.6mm) from Case for 10s. TL 260 260 o C



Description

These are N-Channel enhancement mode silicon gate power field effect transistors RFM12N35 designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types RFM12N35 can be operated directly from integrated circuits.




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