Features: • 12A, 180V and 200V• rDS(ON) = 0.250W• Related Literature- TB334 Guidelines for Soldering Surface Mount Components to PC Boards Specifications RFM12N18 RFM12N20 RFP18N18 RFM12N20 UNITS Drain to Source Voltage (Note 1) VDSS 180 200 180 200 V Drain...
RFM12N20: Features: • 12A, 180V and 200V• rDS(ON) = 0.250W• Related Literature- TB334 Guidelines for Soldering Surface Mount Components to PC Boards Specifications RFM12N18 RFM12N20...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
RFM12N18 | RFM12N20 | RFP18N18 | RFM12N20 | UNITS | |
Drain to Source Voltage (Note 1) VDSS | 180 | 200 | 180 | 200 | V |
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 180 | 200 | 180 | 200 | V |
Continuous Drain Current ID | 12 | 12 | 12 | 12 | A |
Pulsed Drain Current (Note 3) IDM | 30 | 30 | 30 | 30 | A |
Gate to Source Voltage VGS | ±20 | ±20 | ±20 | ±20 | V |
Maximum Power Dissipation PD | 75 | 75 | 60 | 60 | W |
Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID | 0.8 | 0.8 | 0.8 | 0.8 | W/oC |
Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | oC |
Maximum Temperature for Soldering | |||||
Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | 300 | 300 | o C |
Package Body for 10s, See Techbrief 334 Tpkg | 260 | 260 | 260 | 260 | o C |
These are N-Channel enhancement mode silicon gate power field effect transistors RFM12N20 designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types RFM12N20 can be operated directly from integrated circuits.