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RFM12N18

Features: • 12A, 180V and 200V• rDS(ON) = 0.250W• Related Literature- TB334 Guidelines for Soldering Surface Mount Components to PC Boards Specifications RFM12N18 RFM12N20 RFP18N18 RFM12N20 UNITS Drain to Source Voltage (Note 1) VDSS 180 200 180 200 V Drain...

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SeekIC No. : 004476580 Detail

RFM12N18: Features: • 12A, 180V and 200V• rDS(ON) = 0.250W• Related Literature- TB334 Guidelines for Soldering Surface Mount Components to PC Boards Specifications RFM12N18 RFM12N20...

RFM12N18 Data Sheet

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Part Number:
RFM12N18
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 12A, 180V and 200V
• rDS(ON) = 0.250W
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

  RFM12N18 RFM12N20 RFP18N18 RFM12N20 UNITS
Drain to Source Voltage (Note 1) VDSS 180 200 180 200 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 180 200 180 200 V
Continuous Drain Current ID 12 12 12 12 A
Pulsed Drain Current (Note 3) IDM 30 30 30 30 A
Gate to Source Voltage VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation PD 75 75 60 60 W
Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID 0.8 0.8 0.8 0.8 W/oC
Operating and Storage Temperature .TJ, TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL 300 300 300 300 o C
Package Body for 10s, See Techbrief 334 Tpkg 260 260 260 260 o C



Description

These are N-Channel enhancement mode silicon gate power field effect transistors RFM12N18 designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types RFM12N18 can be operated directly from integrated circuits.




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