RFH25P10

Features:

• -25A, -100V and -80V
• rDS(ON) = 0.150W
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

	RFH25P08 RFK25P08	RFH25P10 RFK25P10	UNITS
Drain to Source Voltage (Note 1) VDSS	-80	-100	V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR	-80	-100	V
Continuous Drain Curren ID	-25	-25	A
Pulsed Drain Current (Note 3) IDM	-60	-60	V
Maximum Power Dissipation PD	±20	±20	V
Maximum Power Dissipation	150	150	W
Operating and Storage Temperature .TJ, TSTG	-55 to 150	-55 to 150	o C
Linear Derating Factor	0.0667	0.0667	W/o C
Leads at 0.063in (1.6mm) from Case for 10s. TL	300	300	o C
Package Body for 10s, See Techbrief 334 (for TO-218AC) Tpkg	260	260	o C

Description

These are P-Channel enhancement mode silicon gate power field effect transistors RFH25P10 designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.These types RFH25P10 can be operated directly from integrated circuits.Formerly developmental type TA49230.