Features: · High current capability· High surge current capability· High reliability· Low reverse current· Low forward voltage drop· High case dielectric strength of 2000 VDC· Ideal for printed circuit board· Very good heat dissipationSpecifications RATING SYMBOL RBV1000D RBV1001D R...
RBV1000D: Features: · High current capability· High surge current capability· High reliability· Low reverse current· Low forward voltage drop· High case dielectric strength of 2000 VDC· Ideal for printed circ...
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RATING | SYMBOL |
RBV 1000D |
RBV 1001D |
RBV 1002D |
RBV 1004D |
RBV 1006D |
RBV 1008D |
RBV 1010D |
UNIT |
Maximum Recurrent Peak Reverse Voltage | VRRM |
50 |
100 |
200 |
400 |
600 |
800 |
1000 |
Volts |
Maximum RMS Voltage | VRMS |
35 |
70 |
140 |
280 |
420 |
560 |
700 |
Volts |
Maximum DC Blocking Voltage | VDC |
50 |
100 |
200 |
400 |
600 |
800 |
1000 |
Volts |
Maximum Average Forward Current Tc = 55 | IF(AV) |
10 |
Amps. | ||||||
Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) |
IFSM |
300 |
Amps. | ||||||
Current Squared Time at t < 8.3 ms. | I2t |
166 |
A2S | ||||||
Maximum Forward Voltage per Diode at IF = 10 Amps. | VF |
1.0 |
Volts | ||||||
Maximum DC Reverse Current Ta = 25 at Rated DC Blocking Voltage Ta = 100 |
IR |
10 |
A | ||||||
IR(H) |
200 |
A | |||||||
Typical Thermal Resistance (Note 1) | RJC |
2.2 |
/W | ||||||
Operating Junction Temperature Range | TJ |
- 40 to + 150 |
|||||||
Storage Temperature Range | TSTG |
- 40 to + 150 |