Features: ·High current capability·High surge current capability·High reliability·Low reverse current·Low forward voltage drop·High case dielectric strength of 2000 V DC·Ideal for printed circuit board·Very good heat dissipationSpecifications RATING SYMBOL RBV1000 RBV1001 RBV1002 ...
RBV1000: Features: ·High current capability·High surge current capability·High reliability·Low reverse current·Low forward voltage drop·High case dielectric strength of 2000 V DC·Ideal for printed circuit bo...
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RATING | SYMBOL |
RBV 1000 |
RBV 1001 |
RBV 1002 |
RBV 1004 |
RBV 1006 |
RBV 1008 |
RBV 1010 |
UNIT |
Maximum Recurrent Peak Reverse Voltage | VRRM |
50 |
100 |
200 |
400 |
600 |
800 |
1000 |
Volts |
Maximum RMS Voltage | VRMS |
35 |
70 |
140 |
280 |
420 |
560 |
700 |
Volts |
Maximum DC Blocking Voltage | VDC |
50 |
100 |
200 |
400 |
600 |
800 |
1000 |
Volts |
Maximum Average Forward Current Tc = 55 | IF(AV) |
10 |
Amps. | ||||||
Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) |
IFSM |
300 |
Amps. | ||||||
Current Squared Time at t < 8.3 ms. | I2t |
160 |
A2S | ||||||
Maximum Forward Voltage per Diode at IF = 5.0 Amps. | VF |
1.0 |
Volts | ||||||
Maximum DC Reverse Current Ta = 25 at Rated DC Blocking Voltage Ta = 100 |
IR |
10 |
A | ||||||
IR(H) |
200 |
A | |||||||
Typical Thermal Resistance (Note 1) | RJC |
2.5 |
/W | ||||||
Operating Junction Temperature Range | TJ |
- 40 to + 150 |
|||||||
Storage Temperature Range | TSTG |
- 40 to + 150 |