Features: • Enhancement-Mode MOSFET Transistors (IDD@0 @ VDD=12.5V, VGG=0V)• Pout>7W @ VDD=12.5V, VGG=3.5V, Pin=20mW• hT>40% @ Pout=7W (VGG control), VDD=12.5V, Pin=20mW• Broadband Frequency Range: 440-520MHz• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V&...
RA07H4452M: Features: • Enhancement-Mode MOSFET Transistors (IDD@0 @ VDD=12.5V, VGG=0V)• Pout>7W @ VDD=12.5V, VGG=3.5V, Pin=20mW• hT>40% @ Pout=7W (VGG control), VDD=12.5V, Pin=20mW̶...
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Features: • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)• Pout>7W...
Features: • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)• Pout>7W...
Features: • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)• Pout>7W...
The RA07H4452M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 440- to 520-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors RA07H4452M. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA.
This module RA07H4452M is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.