Features: • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)• Pout>7W @ VDD=12.5V, VGG=3.5V, Pin=20mW• >40% @ Pout=7W (VGG control), VDD=12.5V, Pin=20mW• Broadband Frequency Range: 400-470MHz• Low-Power Control Current IGG=1mA (typ) at VGG=3.5VR...
RA07H4047M: Features: • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)• Pout>7W @ VDD=12.5V, VGG=3.5V, Pin=20mW• >40% @ Pout=7W (VGG control), VDD=12.5V, Pin=20mW• ...
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Features: • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)• Pout>7W...
Features: • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)• Pout>7W...
DescriptionThe RA07H4047M-E01 is designed as a 7-watt RF MOSFET amplifier module for 12.5V portabl...
SYMBOL | PARAMETER | CONDITIONS | RATING | UNIT |
VDD | Drain Voltage | VGG<3.5V | 13.2 | V |
VGG | Gate Voltage | VDD<12.5V, Pin=0mW | 4 | V |
Pin | Input Power | f=400-470MHz, ZG=ZL=50 |
30 | mW |
Pout | Output Power | 10 | W | |
Tcase(OP) | Operation Case Temperature Range | -30 to +90 | ||
Tstg | Storage Temperature Range | -40 to +110 |
The RA07H4047M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 400- to 470-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors RA07H4047M. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA.
This module RA07H4047M is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.