RA07H4047M-E01

The RA07H4047M-E01 is designed as a 7-watt RF MOSFET amplifier module for 12.5V portable/ mobile radios that operate in the 400 to 470MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (Vgg=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases.

RA07H4047M-E01 has seven features. (1)Enhancement-mode MOSFET transistors. (2)Pout>7W at Vdd=12.5V and Vgg=3.5V and Pin=20mW. (3)T>40% at Pout=7W (Vgg control), Vdd=12.5V and Pin=20mW. (4)Broadband frequency range 400 to 470MHz. (5)Low power control current Igg=1mA typ at Vgg=3.5V. (6)Module size 30x10x5.4mm. (7)Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power. Those are all the main features.

Some RA07H4047M-E01 absolute maximum ratings have been concluded into several points as follow. (1)Its drain voltage would be 13.2V. (2)Its gate voltage would be 4V. (3)Its input power would be 30mW. (4)Its output power would be 10W. (5)Its operation case temperature range would be from -30°C to 90°C. (6)Its storage temperature range would be from -40°C to 110°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some RA07H4047M-E01 electrical characteristics are concluded as follow. (1)Its frequency range would be min 400MHz and max 470MHz. (2)Its output power would be min 7W. (3)Its total efficiency would be min 40%. (4)Its 2nd harmonic would be max -25dBc. (5)Its input VSWR would be max 4:1. (5)Its gate current would be typ 1mA. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!