Photodetector Transistors OPTO_LIGHTING
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Maximum Power Dissipation : | 100 mW | Maximum Dark Current : | 100 nA |
Package / Case : | Thin Side Looker |
The QSE214C is designed as plastic silicon infrared phototransistorand is a silicon phototransistor encapsulated in a medium angle, infrared transparent, clear thin plastic sidelooker package.
QSE214C has six features.The first one is that it would be the NPN silicon phototransistor.The second one is about its package type which would be sidelooker.The third one is that it would have medium reception angle which would be 50°.The fourth one is that it would be daylight filter.The fifth one is that it would have clean epoxy package.The sixth one is that it would have the matching emitter which would be QEE213.
Some absolute maximum ratings of QSE214C (Ta = 25°C unless otherwise specified) have been concluded into several points as follow.The first one is about its operating temperature which would be from -40 to +100 °C.The second one is about its storage temperature which would be -40 to +100 °C.The third one is about its soldering temperature (Iron) which would be 240 for 5 sec °C.The fourth one is about its soldering temperature (Flow) which would be 260 for 10 sec °C.The fifth one is about its collector to emitter voltage which would be 30 V.The sixth one is about its emitter to collector voltage which would be 5 V.The seventh one is about its power dissipation which would be 100 mW.
And also there are some important electrical / optical characteristics (Ta =25°C unless otherwise specified) about QSE214C.The first one is about its peak sensitivity which would be typ 880 nM.The second one is about its reception angle which would be typ ±25°.The third one is about its collector emitter dark current which would be max 100 nA with condition of Vce= 10V, Ee=0.The fourth one is about its collector emitter breakdown voltage which would be min 30V with condition of Ic=1mA.The fifth one is about its emitter collector breakdown voltage which would be min 5V with condition of Ie= 100A.
Some notes about QSE214C.Derate power dissipation linearly 1.33 mW/°C above 25°C.And RMA flux is recommended.Methanol or isopropyl alcohols are recommended as cleaning agents.Soldering iron 1/16" (1.6 mm) minimum from housing.And = 950 nm GaAs.For more information please contact us.
Technical/Catalog Information | QSE214C |
Vendor | Fairchild Optoelectronics Group |
Category | Sensors, Transducers |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Current - Collector (Ic) (Max) | - |
Current - Dark (Id) (Max) | 100nA |
Power - Max | 100mW |
Orientation | Side View |
Mounting Type | Through Hole |
Package / Case | Radial |
Wavelength | 880nm |
Viewing Angle | 50° |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | QSE214C QSE214C |