Photodetector Transistors Phototransistor Lo Light Reject
QSE243: Photodetector Transistors Phototransistor Lo Light Reject
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Maximum Power Dissipation : | 100 mW | Maximum Dark Current : | 100 nA |
Package / Case : | Thin Side Looker |
Parameter |
Symbol |
Rating |
Unit |
Operating Temperature |
TOPR |
-40 to + 100 |
°C |
Storage Temperature |
TSTG |
-40 to + 100 |
°C |
Soldering Temperature (Iron)(2,3,4) |
TSOL-I |
240 for 5 sec |
°C |
Soldering Temperature (Flow)(2,3) |
TSOL-F |
260 for 10 sec |
°C |
Collector-Emitter Voltage |
VCE |
30 |
V |
Emitter-Collector Voltage |
VEC |
5 |
V |
Power Dissipation(1) |
PD |
100 |
mW |
The QSE243 is a silicon phototransistor with low light level rejection, encapsulated in a medium angle, thin clear plastic sidelooker package.