QS6M4TR, US $ .14-.38 , ROHM Semiconductor, QS6M4TR DataSheet download, circuit diagram from SeekIC.com

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QS6M4TR: MOSFET N+P 30 20V 1.5A TSMT6

QS6M4TR Data Sheet

US $ .14~.38 / Piece | Get Latest Price

Part Number:: QS6M4TR
Mfg:: ROHM Semiconductor
Supply Ability:: 5000

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25~100
100~500

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$.38
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$.23
$.14

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Upload time: 2024/11/21

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What is this?

QS6M3 evaluate
Features: ·Low on-resistance.·Built-in G-S Protection Diode.·Small and Surface Mount Package (TSMT...
QS6M3TR evaluate
US $.13 - .33 / Piece

MOSFET N+P 30 20V 1.5A TSMT6
QS6M4 evaluate
PinoutDescriptionFeatures of the QS6M4 are:(1)the QS6M4 combines Pch MOSFET with a schottky barrie...

Product Details

Quick Details

Transistor Polarity :	N and P-Channel	Drain-Source Breakdown Voltage :	+ 30 V, - 20 V
Gate-Source Breakdown Voltage :	+/- 12 V	Continuous Drain Current :	1.5 A
Resistance Drain-Source RDS (on) :	0.26 Ohms	Configuration :	Dual
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TSMT-6	Packaging :	Reel

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Transistor Polarity : N and P-Channel
Continuous Drain Current : 1.5 A
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 0.26 Ohms
Package / Case : TSMT-6
Drain-Source Breakdown Voltage : + 30 V, - 20 V

Parameters:

Technical/Catalog Information	QS6M4TR
Vendor	Rohm Semiconductor(VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	30V, 20V
Current - Continuous Drain (Id) @ 25° C	1.5A
Rds On (Max) @ Id, Vgs	230 mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) @ Vds	80pF @ 10V
Power - Max	1.25W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	1.6nC @ 4.5V
Package / Case	TSMT6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	QS6M4TR QS6M4TR QS6M4CT ND QS6M4CTND QS6M4CT

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QS6M4TR

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