MOSFET N+P 30 20V 1.5A TSMT6
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Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | + 30 V, - 20 V | ||
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 1.5 A | ||
Resistance Drain-Source RDS (on) : | 0.26 Ohms | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TSMT-6 | Packaging : | Reel |
Technical/Catalog Information | QS6M4TR |
Vendor | Rohm Semiconductor(VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N and P-Channel |
Drain to Source Voltage (Vdss) | 30V, 20V |
Current - Continuous Drain (Id) @ 25° C | 1.5A |
Rds On (Max) @ Id, Vgs | 230 mOhm @ 1.5A, 4.5V |
Input Capacitance (Ciss) @ Vds | 80pF @ 10V |
Power - Max | 1.25W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 1.6nC @ 4.5V |
Package / Case | TSMT6 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | QS6M4TR QS6M4TR QS6M4CT ND QS6M4CTND QS6M4CT |