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QS6M4TR

MOSFET N+P 30 20V 1.5A TSMT6

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SeekIC No. : 00151060 Detail

QS6M4TR: MOSFET N+P 30 20V 1.5A TSMT6

QS6M4TR Data Sheet

floor Price/Ceiling Price

US $ .14~.38 / Piece | Get Latest Price
Part Number:
QS6M4TR
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.38
  • $.3
  • $.23
  • $.14
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : + 30 V, - 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 1.5 A
Resistance Drain-Source RDS (on) : 0.26 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TSMT-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Transistor Polarity : N and P-Channel
Continuous Drain Current : 1.5 A
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 0.26 Ohms
Package / Case : TSMT-6
Drain-Source Breakdown Voltage : + 30 V, - 20 V


Parameters:

Technical/Catalog InformationQS6M4TR
VendorRohm Semiconductor(VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)30V, 20V
Current - Continuous Drain (Id) @ 25° C1.5A
Rds On (Max) @ Id, Vgs230 mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) @ Vds 80pF @ 10V
Power - Max1.25W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs1.6nC @ 4.5V
Package / CaseTSMT6
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names QS6M4TR
QS6M4TR
QS6M4CT ND
QS6M4CTND
QS6M4CT



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