QS6M4

Features of the QS6M4 are:(1)the QS6M4 combines Pch MOSFET with a schottky barrier diode in a single TSMT5 package;(2)Pch MOSCFET have a low on-state resistance with a fast switching;(3)Pch MOSFET is reacted a low voltage drive (2.5V).

The absolute maximum ratings of the QS6M4 can be summarized as:(1):the parameter is drain-source voltage,the symbol is VDSS,the limits nchannel is 30,the limits pchannel is -20,the unit is V;(2):the parameter is gate-source voltage,the symbol is VGSS,the limits nchannel is 12,the limits pchannel is 12,the unit is V;(3):the parameter is drain current continuous,the symbol is ID,the limits nchannel is ±1.5,the limits pchannel is ±1.5,the unit is A;(4):the parameter is drain current pulsed,the symbol is IDP,the limits nchannel is ±6.0,the limits pchannel is ±6.0,the unit is A;(5):the parameter is source current continuous,the symbol is IS,the limits nchannel is 0.8,the limits pchannel is -0.75,the unit is A;(6):the parameter is source current pulsed,the symbol is ISP,the limits nchannel is 6.0,the limits pchannel is -6.0,the unit is A;(7):the parameter is channel temperature,the symbol is TCH,the limits is 150,the unit is ;(8):the parameter is total power dissipation,the symbol is PD,the limits is 1.25,the unit is W;(9):the parameter is storage temperature,the symbol is Tstg,the limits is -55 to +150,the unit is .

The thermal resistance of the QS6M4 can be summarized as the parameter is channel to ambient,the symbol is Rth(ch-a),the limits is 100,the unit is /W.