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QS6J3TR

MOSFET 2P-CH 20V 1.5A

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SeekIC No. : 00151162 Detail

QS6J3TR: MOSFET 2P-CH 20V 1.5A

QS6J3TR Data Sheet

floor Price/Ceiling Price

US $ .18~.4 / Piece | Get Latest Price
Part Number:
QS6J3TR
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.4
  • $.31
  • $.24
  • $.18
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : - 1.5 A
Resistance Drain-Source RDS (on) : 215 mOhms at 4.5 V Configuration : Dual
Mounting Style : SMD/SMT Package / Case : TSMT-5
Packaging : Reel    

Description

Maximum Operating Temperature :
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : - 1.5 A
Package / Case : TSMT-5
Resistance Drain-Source RDS (on) : 215 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationQS6J3TR
VendorRohm Semiconductor(VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C1.5A
Rds On (Max) @ Id, Vgs215 mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) @ Vds 270pF @ 10V
Power - Max1.25W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs3nC @ 4.5V
Package / CaseTSMT6
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names QS6J3TR
QS6J3TR
QS6J3CT ND
QS6J3CTND
QS6J3CT



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