MOSFET 2P-CH 20V 1.5A
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 20 V |
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | - 1.5 A |
Resistance Drain-Source RDS (on) : | 215 mOhms at 4.5 V | Configuration : | Dual |
Mounting Style : | SMD/SMT | Package / Case : | TSMT-5 |
Packaging : | Reel |
Technical/Catalog Information | QS6J3TR |
Vendor | Rohm Semiconductor(VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 P-Channel (Dual) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 1.5A |
Rds On (Max) @ Id, Vgs | 215 mOhm @ 1.5A, 4.5V |
Input Capacitance (Ciss) @ Vds | 270pF @ 10V |
Power - Max | 1.25W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 3nC @ 4.5V |
Package / Case | TSMT6 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | QS6J3TR QS6J3TR QS6J3CT ND QS6J3CTND QS6J3CT |