QS6J11TR

MOSFET 2P-CH 12V 2A TSMT6

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SeekIC No. : 003430088 Detail

QS6J11TR: MOSFET 2P-CH 12V 2A TSMT6

floor Price/Ceiling Price

US $ .16~.46 / Piece | Get Latest Price
Part Number:
QS6J11TR
Mfg:
Supply Ability:
5000

Price Break

  • Qty
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  • Unit Price
  • $.46
  • $.36
  • $.32
  • $.27
  • $.24
  • $.2
  • $.16
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Series: - Manufacturer: Rohm Semiconductor
FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25° C: 2A
Rds On (Max) @ Id, Vgs: 105 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) @ Vgs: 6.5nC @ 4.5V Input Capacitance (Ciss) @ Vds: 770pF @ 6V
Power Dissipation : 21 W Power - Max: 600mW
Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSMT6    

Description

FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Series: -
FET Type: 2 P-Channel (Dual)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25° C: 2A
Gate Charge (Qg) @ Vgs: 6.5nC @ 4.5V
Package / Case: SOT-23-6 Thin, TSOT-23-6
Manufacturer: Rohm Semiconductor
Vgs(th) (Max) @ Id: 1V @ 1mA
Power - Max: 600mW
Supplier Device Package: TSMT6
Rds On (Max) @ Id, Vgs: 105 mOhm @ 2A, 4.5V
Input Capacitance (Ciss) @ Vds: 770pF @ 6V


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