MOSFET 2P-CH 12V 2A TSMT6
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Series: | - | Manufacturer: | Rohm Semiconductor |
FET Type: | 2 P-Channel (Dual) | FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 12V | Current - Continuous Drain (Id) @ 25° C: | 2A |
Rds On (Max) @ Id, Vgs: | 105 mOhm @ 2A, 4.5V | Vgs(th) (Max) @ Id: | 1V @ 1mA |
Gate Charge (Qg) @ Vgs: | 6.5nC @ 4.5V | Input Capacitance (Ciss) @ Vds: | 770pF @ 6V |
Power Dissipation : | 21 W | Power - Max: | 600mW |
Mounting Type: | Surface Mount | Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | TSMT6 |