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QL7180

Features: Clock Network• 9 global clock networks• 1 dedicated, 8 programmable • 16 I/O (high drive) networks: 2 banks per I/O • 20 Quad-net networks: 5 per quadrantProgrammable I/O• High performance enhanced I/O: less than 3 ns Tco• Programmable slew rate contro...

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SeekIC No. : 004468136 Detail

QL7180: Features: Clock Network• 9 global clock networks• 1 dedicated, 8 programmable • 16 I/O (high drive) networks: 2 banks per I/O • 20 Quad-net networks: 5 per quadrantProgrammab...

QL7180 Data Sheet

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Part Number:
QL7180
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Description



Features:

Clock Network
• 9 global clock networks
• 1 dedicated, 8 programmable
• 16 I/O (high drive) networks: 2 banks per I/O
• 20 Quad-net networks: 5 per quadrant
Programmable I/O
• High performance enhanced I/O: less than 3 ns Tco
• Programmable slew rate control
• Programmable I/O standards
• LVTTL, LVCMOS, PCI, GTL+, SSTL2, and SSTL3
• 8 independent I/O banks
• 3 register configuration: Input, Output, OE
Parameterized IP
• Free parameterized IP administered with a DSP Wizard
• Supports multiple and hierarchical IP instantiations
High Speed Customizable Logic
• 0.25u, 5 layer metal CMOS process
• 2.5 V Vcc, 2.5 / 3.3 V drive capable I/O
• 512 programmable I/O
• 4,032 Logic Cells
• 660,000 max system gates
• Muxed based architecture, non-volatile technology
• Completely customizable for any digital applications
Dual Port SRAM
• 36 blocks of dual-port SRAM
• 2,304 bit dual port high performance SRAM Blocks
• Total of 82,900 bits
• RAM / ROM / FIFO Wizard for automatic configuration
• Configurable and cascadable
• Array sizes of 2, 4, 9, and 18
• < 3 ns access times, 300+ MHz FIFO


Application

• Signal processing operators
• Signal processing functions
• Networking / communications for VoIP
• Speech / voice processing
• Channel coding


Specifications

VCC Voltage

-0.5 to 3.6V

DC Input Current

±20 mA

VCCIO Voltage

-0.5 to 4.6V

ESD Pad Protection

±2000V

VREF Voltage

2.7V

Storage Temperature

-65 to +150

Input Voltage

-0.5V to VCCIO +0.5V

Maximum Lead
Temperature

300

Latch-up Immunity

±100 mA




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