QJS0614001

The QJS0614001 is designed as single MOSFET module with 140A and 600V which is speciallydesigned for customer applications.

QJS0614001 has eight features. The first one is same configuration as JS225010. The next one is it would have isolated mounting. The next one is it would have low drive requirement. The next one is internal series gate resistors. The next one is isolation material - active metal AIN. The next one is it would have reduced thermal impedance. The next one is it would use the baseplate material - molybdenum (or similar). The next one is it would have improved sysling capability through TCE matched construction. That are all the main features.

Some important electrical characteristics of QJS0614001 have been concluded into several points as follow. The first one is about its drain source breakdown voltage which would be max 600V. The next one is about its gate source breakdown voltage which would be max 30V. The next one is about its gate leakage current which would be max 70uA. The next one is about its drain current which would be max 7nA. The next one is about its gate source threshold voltage which would be min 2V and typ 3V and max 4V. The next one is about its drain source on state resistance which would be typ 47.1mohm and max 61.4mohm. The next one is about its source drain voltage which would be typ 1.5V and max 2.0V. The next one is about its input capacitance which would be typ 19600pF. The next one is about its output capacitance which would be typ 2450pF. The next one is about its reverse transfer capacitance which would be typ 350pF. The next one is about its thermal impedance junction to case which would be typ 0.057C/W. And so on. If you have any question or suggestion or want to know more information please contact us for details.