QJS0612001

The QJS0612001 is designed as single MOSFET module features low 71.6 mohm rds(on) is specially designed for customer applications.

QJS0612001 has six features. The first one is it would have the same configuration as JS225010. The second one is it would have isolated mounting. The third one is it would have low drive requirement. The fourth one is it would hae internal series gate resistors. The fifth one is about its isolation material which would be DBC alumina. The sixth one is about its baseplate material which would be copper. That are all the main features.

Some electrical characteristics of QJS0612001 have been concluded into several points as follow. The first one is about its drain source breakdown voltage which would be 600V. The second one is about its gate source breakdown voltage which would be max 30V. The third one is about its gate leakage current which would be 60uA. The fourth one is about its drain current which would be max 6mA. The fifth one is about its gate source threshold voltage which would be min 2V and typ 3V and max 4V. The sixth one is about its drain source on state resistance which would be typ 55.0 mohm and max 71.6 mohm. The seventh one is about its source drain voltage which would be typ 1.5V and max 2.0V. The eighth one is about its input capacitance which would be typ 16800pF. The ninth one is about its output capacitance which would be typ 2100pF. The tenth one is about its reverse transfer capacitance which would be typ 300pF. The eleventh one is about its thermal impedance junction to case which would be 0.088C/W. The twelfth one is about its V isolation which would be max 2000V. And so on. If you have any question or suggestion or want to know more information about QJS0612001 please contact us for details.