Q62702-Z1387

The Q62702-Z1387 is designed as one kind of PNP silicon darlington transistor that has four points of features:(1)For general AF applications; (2)High collector current; (3)High current gain; (4)Complementary types: PZTA 13, PZTA 14 (NPN).

The absolute maximum ratings of the Q62702-Z1387 can be summarized as:(1)Collector-emitter voltage: 30 V;(2)Collector-base voltage: 30 V;(3)Emitter-base voltage: 10 V;(4)Collector current: 500 mA;(5)Peak collector current: 800 mA;(6)Base current: 100 mA;(7)Peak base current: 200 mA;(8)Total power dissipation, TS = 124 °C: 1.5 W;(9)Junction temperature: 150 ;(10)Storage temperature range: -65 to +150 .

The electrical characteristics of the Q62702-Z1387 can be summarized as:(1)Collector-emitter breakdown voltage: 30 V;(2)Collector-base breakdown voltage: 30 V;(3)Emitter-base breakdown voltage: 10 V;(4)Collector-emitter saturation voltage: 1.5 V;(5)Base-emitter saturation voltage: 2.0 V. If you want to know more information such as the electrical characteristics about the Q62702-Z1387, please download the datasheet in www.seekic.com or www.chinaicmart.com.