Specifications Parameter Symbol Values Unit Collector-emitter voltageBDP 951 BDP 953 BDP 955 VCEO 12010080 V Collector-base voltageBDP 951 BDP 953 BDP 955 VCBO 140120100 Emitter-base voltage VEBO 5 DC collector current IC 3 A ...
Q62702: Specifications Parameter Symbol Values Unit Collector-emitter voltageBDP 951 BDP 953 BDP 955 VCEO 12010080 V Collector-base voltageBDP 951 BDP 953 BDP 955 VCB...
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DescriptionThe Q62702-B63 is NPN silicon epibase power transistors in TO 126 plastic package(12A 3...
Parameter |
Symbol |
Values |
Unit |
Collector-emitter voltage |
VCEO |
120 |
V |
Collector-base voltage |
VCBO |
140 | |
Emitter-base voltage |
VEBO |
5 | |
DC collector current |
IC |
3 |
A |
Peak collector current |
ICM |
5 | |
Base current |
IB |
200 |
mA |
Peak base current |
IBM |
500 | |
Total power dissipation, TS = 99°C |
Ptot |
3 |
W |
Junction temperature |
TJ |
150 |
°C |
Storage temperature |
Tstg |
- 65 ... + 150 |