DescriptionThe Q62702-P936 is designed as one kind of Silicon PIN photodiode with very short switching time that has three points of features:(1)Especially suitable for applications from 350 nm to 1100 nm; (2)Short switching time (typ. 5 ns); (3)Hermetically sealed metal package (TO-18). And it ca...
Q62702-P936: DescriptionThe Q62702-P936 is designed as one kind of Silicon PIN photodiode with very short switching time that has three points of features:(1)Especially suitable for applications from 350 nm to 1...
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DescriptionThe Q62702-B63 is NPN silicon epibase power transistors in TO 126 plastic package(12A 3...
The Q62702-P936 is designed as one kind of Silicon PIN photodiode with very short switching time that has three points of features:(1)Especially suitable for applications from 350 nm to 1100 nm; (2)Short switching time (typ. 5 ns); (3)Hermetically sealed metal package (TO-18). And it can be used in optical sensor of high modulation bandwidth for light pens.
The absolute maximum ratings of the Q62702-P936 can be summarized as:(1)Operating and storage temperature range: -40 to +125 ;(2)Soldering temperature in 2 mm distance from case bottom (t </= 3 s): 230 ;(3)Reverse voltage: 50 V;(4)Total power dissipation: 250 mW.
The electrical characteristics of the Q62702-P936 can be summarized as:(1)Collector-emitter breakdown voltage: 30 V;(2)Collector-base breakdown voltage: 30 V;(3)Emitter-base breakdown voltage: 10 V;(4)Collector-emitter saturation voltage: 1.5 V;(5)Base-emitter saturation voltage: 2.0 V. If you want to know more information such as the electrical characteristics about the Q62702-P936, please download the datasheet in www.seekic.com or www.chinaicmart.com.