DescriptionThe Q62702-P270 is designed as one kind of silicon differential photodiode that can be used in (1)follow-up controls; (2)edge drives; (3)industrial electronics; (4)for control and drive circuits. This device has four points of features:(1)Especially suitable for applications from 400 nm...
Q62702-P270: DescriptionThe Q62702-P270 is designed as one kind of silicon differential photodiode that can be used in (1)follow-up controls; (2)edge drives; (3)industrial electronics; (4)for control and drive c...
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DescriptionThe Q62702-B63 is NPN silicon epibase power transistors in TO 126 plastic package(12A 3...
The Q62702-P270 is designed as one kind of silicon differential photodiode that can be used in (1)follow-up controls; (2)edge drives; (3)industrial electronics; (4)for control and drive circuits. This device has four points of features:(1)Especially suitable for applications from 400 nm to 1100 nm; (2)High photosensitivity; (3)Hermetically sealed metal package (similar to TO-5), suitable up to 125 ); (4)Double diode with extremely high homogeneousness.
The absolute maximum ratings of the Q62702-P270 can be summarized as:(1)Operating and storage temperature range: -40 to +80 ;(2)Soldering temperature in 2 mm distance from case bottom: 230 ;(3)Reverse voltage: 10 V;(4)Insulation voltage vs. package: 100 V;(5)Total power dissipation: 50 mW.
And the other characteristics of the Q62702-P270 can be summarized as:(1)Spectral sensitivity: 24 nA/Lx;(2)Wavelength of max. sensitivity: 900 nm;(3)Radiant sensitive area: 1.54 mm x 1.54 mm;(4)Dimensions of radiant sensitive area: 0.7 x 2.2 mm;(5)Distance chip front to case surface: 1.1 to 1.6 mm;(6)Half angle: ±55 grad deg.. If you want to know more information such as the electrical characteristics about the Q62702-P270, please download the datasheet in www.seekic.com or www.chinaicmart.com .