DescriptionThe Q62702-P245 is designed as one kind of silicon differential photodiode that can be used in (1)photointerrupters; (2)industrial electronics; (3)for control and drive circuits. This device has four points of features:(1)Especially suitable for applications from 380 nm to 1180 nm (SFH ...
Q62702-P245: DescriptionThe Q62702-P245 is designed as one kind of silicon differential photodiode that can be used in (1)photointerrupters; (2)industrial electronics; (3)for control and drive circuits. This dev...
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DescriptionThe Q62702-B63 is NPN silicon epibase power transistors in TO 126 plastic package(12A 3...
The Q62702-P245 is designed as one kind of silicon differential photodiode that can be used in (1)photointerrupters; (2)industrial electronics; (3)for control and drive circuits. This device has four points of features:(1)Especially suitable for applications from 380 nm to 1180 nm (SFH 309 P) and of 880 nm (SFH 309 PFA); (2)High linearity; (3)3 mm plane LED plastic package; (4)Available in groups.
The absolute maximum ratings of the Q62702-P245 can be summarized as:(1)Operating and storage temperature range: -55 to +100 ;(2)Soldering temperature in 2 mm distance from case bottom: 260 ;(3)Collector-emitter voltage: 35 V;(4)Collector current: 15 mA;(5)Collector surge current: 75 mA;(6)Total power dissipation: 165 mW;(7)Thermal resistance: 450 K/W.
And the other characteristics of the Q62702-P245 can be summarized as:(1)Spectral sensitivity: 24 nA/Lx;(2)Wavelength of max. sensitivity: 900 nm;(3)Radiant sensitive area: 0.045 mm x 0.045 mm;(4)Dimensions of chip area: 0.45 x 0.45 mm;(5)Distance chip front to case surface: 0.4 to 0.8 mm;(6)Half angle: ±75 grad deg.. If you want to know more information such as the electrical characteristics about the Q62702-P245, please download the datasheet in www.seekic.com or www.chinaicmart.com .