Features: . Especially suitable for applications from 450 nm to 1100 nm. High linearity. Hermetically sealed metal package (TO-18)with base connection suitable up to 125 °C. Available in groupsApplication. Photointerrupters. Industrial electronics. For control and drive circuitsSpecifications ...
Q62702-P16-S3: Features: . Especially suitable for applications from 450 nm to 1100 nm. High linearity. Hermetically sealed metal package (TO-18)with base connection suitable up to 125 °C. Available in groupsAppli...
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DescriptionThe Q62702-B63 is NPN silicon epibase power transistors in TO 126 plastic package(12A 3...
. Especially suitable for applications from 450 nm to 1100 nm
. High linearity
. Hermetically sealed metal package (TO-18)
with base connection suitable up to 125 °C
. Available in groups
Bezeichnung Description |
Symbol Symbol |
Wert Value |
Einheit Unit |
Betriebs- und Lagertemperatur Operating and storage temperature range |
Top; Tstg | 55 ... + 125 | °C |
Lottemperatur bei Tauchlotung Lotstelle 2 mm vom Gehause, Lotzeit t 5 s Dip soldering temperature 2 mm distance from case bottom, soldering time t 5 s |
TS | 260 | °C |
Lottemperatur bei Kolbenlotung Lotstelle 2 mm vom Gehause, Lotzeit t 3 s Iron soldering temperature 2 mm distance from case bottom, soldering time t 3 s |
TS | 300 | °C |
Kollektor-Emitterspannung Collector-emitter voltage |
VCE | 50 | V |
Kollektorstrom Collector current |
IC | 50 | mA |
Kollektorspitzenstrom, < 10 s Collector surge current |
ICS | 200 | mA |
Emitter-Basisspannung Emitter-base voltage |
VEB | 7 | V |
Verlustleistung, TA = 25 °C Total power dissipation |
Ptot | 220 | mW |
Warmewiderstand Thermal resistance |
RthJA | 450 | K/W |