DescriptionThe Q62702-D239 is designed as one kind of epibase power darlington transistors (40 W) with diode and resistors in a TO126 plastic package. This device os electrically connected to the metallic mounting area. It for AF applications is outstanding for particulary high current gain. Toget...
Q62702-D239: DescriptionThe Q62702-D239 is designed as one kind of epibase power darlington transistors (40 W) with diode and resistors in a TO126 plastic package. This device os electrically connected to the me...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
DescriptionThe Q62702-B63 is NPN silicon epibase power transistors in TO 126 plastic package(12A 3...
The Q62702-D239 is designed as one kind of epibase power darlington transistors (40 W) with diode and resistors in a TO126 plastic package. This device os electrically connected to the metallic mounting area. It for AF applications is outstanding for particulary high current gain. Together with BD675, BD677 and BD679.
The absolute maximum ratings of the Q62702-D239 can be summarized as:(1)collector-emitter voltage: 45 to 80 V;(2)collector-base voltage: 45 to 80 V;(3)base-emitter voltage: 5 V;(4)collector current: 4 A;(5)collector-peak current: 7 A;(6)base current: 0.1 A;(7)storage temperature range: -55 to +150 ;(8)junction temperature: 150 ;(9)total power dissipation: 40 W. If you want to know more information such as the electrical characteristics about the Q62702-D239, please download the datasheet in www.seekic.com or www.chinaicmart.com .