Features: · High current gain· High collector current· Low collector-emitter saturation voltage· Complementary types: BC 327, BC 328 (PNP)Specifications Parameter Symbol Values Unit Collector-emitter voltage VCE0 45 V Collector-base voltage VCB0 50 Emitter-base voltage VEB0 ...
Q62702-C313: Features: · High current gain· High collector current· Low collector-emitter saturation voltage· Complementary types: BC 327, BC 328 (PNP)Specifications Parameter Symbol Values Unit Colle...
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DescriptionThe Q62702-B63 is NPN silicon epibase power transistors in TO 126 plastic package(12A 3...
Parameter | Symbol | Values | Unit |
Collector-emitter voltage | VCE0 | 45 | V |
Collector-base voltage | VCB0 | 50 | |
Emitter-base voltage | VEB0 | 5 | |
Collector current | IC | 800 | mA |
Peak collector current | ICM | 1 | A |
Base current | IB | 100 | mA |
Peak base current | IBM | 200 | |
Total power dissipation, TC = 66 °C | Ptot | 625 | mW |
Junction temperature | Tj | 150 | °C |
Storage temperature range | Tstg | 65 . + 150 |