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PZ1721B25U

Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Gold metallization realizes very stable characteristics and excellent lifetime· Multicell geometry gives good balance of di...

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SeekIC No. : 004467490 Detail

PZ1721B25U: Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Gold metallization real...

PZ1721B25U Data Sheet

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Part Number:
PZ1721B25U
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Interdigitated structure provides high emitter efficiency
· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Internal input and output prematching ensures good stability and easy broadband use.


Application

· Common base class-B broadband amplifiers under CW conditions in military and professional applications.


Description

NPN silicon planar epitaxial microwave power transistor PZ1721B25U in a SOT443A metal ceramic flange package with the base connected to the flange.




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